NP100P06PLG-E1-AY【PDF 6/9 页】MOSFET P-CH -60V MP-25ZP/TO-263

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NP100P06PLG

-300

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

FORWARD TRANSFER CHARACTERISTICS

-1000

V DS = ? 10V

-250

-200

V GS = ? 10 V

-100

-10

Pulsed

-150

-100

-50

0

? 4.5 V

Pulsed

-1

-0.1

-0.01

-0.001

T ch = ? 55 ° C

? 25 ° C

25 ° C

75 ° C

125 ° C

150 ° C

175 ° C

0

-0.5

-1

-1.5

-2

0

-1

-2

-3

-4

-5

V DS - Drain to Source Voltage - V

GATE TO SOURCE THRESHOLD VOLTAGE vs.

CHANNEL TEMPERATURE

-3

1000

V GS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

-2.5

-2

-1.5

100

10

T ch = ? 55 ° C

? 25 ° C

25 ° C

75 ° C

-1

-0.5

V DS = ? 10 V

I D = ? 1 mA

1

V DS = ? 10 V

Pulsed

125 ° C

150 ° C

175 ° C

0

0.1

-75

-25

25

75

125

175

225

-0.1

-1

-10

-100

-1000

T ch - Channel Temperature - ° C

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

10

8

I D - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

20

16

I D = ? 100 A

6

4

V GS = ? 4.5 V

? 10 V

12

8

? 50 A

? 20 A

2

0

Pulsed

4

0

Pulsed

-1

-10

-100

-1000

0

-5

-10

-15

-20

4

I D - Drain Current - A

Data Sheet D18695EJ3V0DS

V GS - Gate to Source Voltage - V

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